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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220C package Complement to type TIP42/42A/42B/42C APPLICATIONS For medium power linear switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP41/41A/41B/41C Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO Collector-base voltage PARAMETER CONDITIONS TIP41 TIP41A TIP41B VCEO CHA IN E SEM NG TIP41C TIP41 TIP41A Open base TIP41B TIP41C Open emitter CON I DUC VALUE 40 TOR 60 80 100 40 60 UNIT V Collector-emitter voltage V 80 100 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current (DC) Collector current-Pulse Base current Open collector 5 6 10 2 V A A A W TC=25ae Collector power dissipation Ta=25ae Junction temperature Storage temperature 65 2 150 -65~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER TIP41 TIP41A VCEO(SUS) Collector-emitter sustaining voltage TIP41B TIP41C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage TIP41 TIP41A ICES Collector cut-off current IC=6A; IB=0.6A IC=6A ; VCE=4V VCE=40V; VEB=0 VCE=60V; VEB=0 VCE=80V; VEB=0 IC=30mA; IB=0 CONDITIONS TIP41/41A/41B/41C SYMBOL MIN 40 60 TYP. MAX UNIT V 80 100 1.5 2.0 V V ICEO IEBO hFE-1 hFE-2 fT TIP41B TIP41C IN Collector cut-off current ANG CH TIP41/41A MIC E SE VCE=100V; VEB=0 VCE=30V; IB=0 VCE=60V; IB=0 VEB=5V; IC=0 IC=0.3A ; VCE=4V IC=3A ; VCE=4V IC=0.5A ; VCE=10V DUC ON TOR 0.4 0.7 mA mA TIP41B/41C Emitter cut-off current DC current gain DC current gain Transiton frequency 1.0 30 15 3 75 mA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE TIP41/41A/41B/41C CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP41/41A/41B/41C CHA IN E SEM NG OND IC TOR UC 4 |
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